Abstract
Two series of Na2SrSi2O6:Ce3+ and Na2SrSi2O6:Ce3+, Tb3+ phosphors were synthesized via high-temperature solid-state reaction. The obtained Na2SrSi2O6:Ce3+ phosphors exhibit an intense excitation peak at 284 and 360 nm, which was suited to the dominant emission band of a NUV light-emitting-diode (LED) chip. In the Ce3+ single doped system, the critical quench concentration of the phosphor was approximately 4 mol% and a dipole-dipole interaction was verified for the concentration quench mechanism. In addition, Tb3+ ions were introduced as a sensitizer, and the effects of introducing the Tb3+ ions are investigated by measuring the photoluminescence emission and excitation spectra, the PL decay curves, and the quantum efficiencies. Results confirm the occurrence of non-radiative energy transfer from Ce3+ to Tb3+ with an efficiency of over 60%, indicating that the developed phosphor can be used as a potential white-light-emitting phosphor for near-UV LED.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
