Tunable bandgap in few-layer black phosphorus by electrical field

Abstract

Dynamically engineering bandgap in semiconductors may enable a flexible design and optimization of electronics and optoelectronics. Layered black phosphorus is a 2D semiconductor with a direct bandgap and promising device characteristics. Theoretical studies indicate that the bandgap in black phosphorus can be tuned by electrical field. Here, through designing a double-gated field-effect transistor device configuration, we experimentally demonstrate that the bandgap in few-layer black phosphorus can be dynamically continually tuned by perpendicular electrical field. With an electrical displacement field of 1 V nm−1, the detailed study indicates that the bandgap can reduce around 100 meV. The finding here should be helpful on the flexible design and optimization of black phosphorus electronics and optoelectronics, and may open up some other new possible applications.