Abstract

This paper presents a theoretical study of the single-mode and birefriengence condition of the silicon photonic wires using the imaginary distance beam propagation method. The photonic wires are suitable for integration with active one-dimensional silicon photonic bandgap waveguides. This inherently will reduce the propagation loss caused by the scattering factors within the photonic bandgap structure itself. To the best of our knowledge, we provide for the first time, a systematic study of the various physical parameters that can affect the Q-factor and transmission properties in such waveguides. In order to make this technology viable, the waveguides must be tunable, have low attenuation, possess high Q-factor, and can be switched. Can these be achieved simultaneously without changing the device width and height dimensions? Furthermore, can we meet these aims without placing unrealistic demands in fabrication? The electrical switching of this device is implemented using a p-i-n optical diode. The diode is predicted to require an on state power of 81 nW with rise and fall times of 0.2 and 0.043 ns, respectively. The length of the microcavity and the diameter of the air holes are finely tuned with reference to the Q-factor and transmission. It will be shown that for certain desired resonant wavelength, the Q-factor and transmission properties can be optimized by tuning the length of the cavity and the diameter of the two inner most air holes. This method allows ease of fabrication by not having to vary the waveguide width and height to obtain the tuning effects. Optical simulation was performed using the three-dimensional finite-difference time-domain simulation method

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