Abstract
Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.
Highlights
Silicon interposers based on through-silicon via (TSV) (Through Silicon Via) technology are applied on the ground and in low-altitude environments to meet the needs of miniaturization, high performance and low cost of aerospace devices
The results showed that the orientation of Sn and Ni3 Sn4 grains determines the intermetallic compound (IMC) growth rate and affects the electromigration reliability of the solder and micro-bump joint
Chu et al [87] studied the thermo-mechanical properties of SnAg micro-bumps, finding that serious crack formation was observed in micro-bumps, and many cracks were propagated across the entire micro-bump along two main paths: Sn grain boundaries with high misorientation angles and SnAg solder/Ni3 Sn4 IMC interfaces
Summary
Silicon interposers based on TSV (Through Silicon Via) technology are applied on the ground and in low-altitude environments to meet the needs of miniaturization, high performance and low cost of aerospace devices. A series of problems like mechanical damage are caused
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