Abstract
In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequencies. The method is divided into the de-embedding and parameter extraction, including six auxiliary configurations and, is referred tos as Two-step Six-configuration Parameter Extraction Method (TSPEM). Compared to the traditional junction capacitance extraction method, this method can extract the value of junction capacitance at higher frequencies with higher accuracy. At the same time, compared to the other de-embedding methods, this method shows better performance in de-embedding the contributions of parasitic structures from the transmission line measurements. The intrinsic junction capacitances obtained by this method and the three-dimensional (3-D) electromagnetic model are combined to form a diode simulation model, which accurately characterizes the capacitance characteristics of the SBD. It was verified with a 200 GHz double frequency multiplier, and the simulation results and measurement results showed good consistency.
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