Abstract
A novel mechanism has been reported for the intrinsic electronic properties of the 8-Pmmn Borophene to investigate the electronic energy spectrum and spectrum parameters of the structure. To examine the structure, we extract the energy spectrum of the Hamiltonian for the monolayer borophene by using analytical method. Additionally, for the intrinsic properties, first we obtained the bare Fermi velocity which findings of the study are consistent with experimental results . After obtained the bare state Fermi velocity 8-Pmmn borophene , dressed with triangular potential and renormalized Fermi velocity has been obtained. Corresponding renormalized Fermi velocity reshaped with the triangular potential which has non-negligible contribution to the intrinsic properties of borophene. This finding has important implications for developing electronic devices which made from the boron due to increasing the controllability of the structure.
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