Abstract
In this paper, we describe the results of trial manufacture of 26 GHz band Solid State Power Amplifier (SSPA) Module. This Module is composed of two common-base (CB) HBT (Heterojunction Bipolar Transistor) chips whose f/sub max/ is over 200 GHz with high power density by using selective regrowth of base contact layer. It has achieved output power of 3.2 W (35.1 dBm), power-added efficiency (PAE) of 13.:3%. Its gain is 4.7 dB because of unbalance between cells, so PAE is small, but high output power, PAE and gain can be achieved by using better balanced HBT chips which NEC has developing.
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