Trends in silicon device technology

Abstract

The present status of silicon device technology is reviewed in order to point out its limitations. The combination of melt-doping, epitaxial growth, and oxide-masked diffusion allows, at least in principle, the construction of about any desired impurity configuration within the silicon crystal. Our present understanding of the silicon-silicon oxide surface allows the design and control of the important surface properties and makes available such important devices as MOS transistors. The limitations of most concern in these areas of wafer fabrication technology are those associated with improving process control and minimizing defects. Effort in this area takes the form of relating cause to effect followed by appropriate detailed process changes. It represents a direction of extreme importance in maximizing the impact of silicon devices through greatly reduced cost.