Abstract
Traps in SiC long-gate metal–semiconductor field-effect transistors (FATFETs) at different wafer positions have been characterized by deep-level transient spectroscopy (DLTS) based on capacitance (C-DLTS) or current (I-DLTS). Two major electron traps, Z1/2 and V1/2, of energies 0.68 eV and 0.91 eV, respectively, are found mainly in the SiC buffer layer, and several hole-like traps appear in the surface or interface regions. In some regions of the wafer, an electron trap EH6/7 of energy 1.77 eV is prominent. Trap EH6/7 as well as the hole-like traps are not uniformly distributed on the wafer.
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