Abstract
We have studied the effects of added silicon on trap-sites of hydrogen in aluminum. For this purpose, we implanted 78-keV silicon ions into pure aluminum specimens, and observed depth profiles and thermal behavior of hydrogen implanted into the samples at liquid nitrogen (LNT) and room temperatures (RT). It was found that for the RT implantation, hydrogen trapped in the AlSi alloy layer forms H 2 bubbles in grain boundaries of Al Si .
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