Abstract
The trap energy profile of top gate In-Ga-Zn-O (IGZO) thin film transistors was extracted successfully using a transmission line model incorporating the conductance method. By implementing the transmission line model method into the conventional conductance method, we were able to evaluate the contact resistance and the channel length modulation precisely and to decouple them to obtain the intrinsic channel conductance. The observed conductance over the angular frequency was almost perfectly symmetrical, which is observed only in the ideal conductance method. Finally, a shallow trap profile, including the trap density and time constant near the conduction band edge of IGZO, was extracted successfully.
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