Abstract
We have studied the energy level of the trap states in P3HT:PCBM-71 bulk heterojunction solar cells by using the PICTS (photo-induced current transient spectroscopy) method. The trap energy level is extracted to be 73.1 meV, which is larger than that of bulk P3HT (∼54 meV). This difference, we believe, is that fullerene anion of PCBM plays as a deep potential well for holes.
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