Abstract
We report on Transverse Acousto-Electric Voltage (TAV) spectroscopy structures which are observed in data taken from GaAs Aℓ GaAs quantum wells at 83°K. The spectra of the quantum wells (QW) show some exciton absorption peaks due to allowed interband transitions from heavy and light hole subbands to conduction subbands. Large TAV is observed below the direct inter-subband transitions and is attributed to the presence of interface states. Being sensitive to the number of free carriers, acoustoelectric interaction has been proven to be a powerful tool in nondestructive testing of semiconductors, since contact to the semiconductor is not needed. In this study, TAV is used extensively to investigate the electrical parameters of quantum wells.
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