Abstract
In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal–metal, metal–semiconductor, and semiconductor–semiconductor junctions are all formed. We find that metal–metal SWNT junctions exhibit surprisingly high conductances of 0.1– 0.2 e 2/h . Semiconductor–semiconductor junctions also show significant linear response conductance. Metal–semiconductor junctions behave as p-type Schottky diodes. All the junction types can reliably pass currents of hundreds of nanoamps.
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