Abstract
The electrical conductivity and Hall coefficient of TlInSe2〈Ln〉 (Ln = Eu, Yb, Sm) were measured between 300 and 900 K. The results were used to determine the band gap, ionization energy of impurities, conductivity type, and Hall mobility of charge carriers in TlInSe2〈Ln〉. The temperature at which the Hall coefficient changes sign is shown to increase with doping level.
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