Abstract
Topological insulator/perovskite manganese oxide composites (Bi2Se3/La0.7Sr0.3MnO3) were prepared using the bonded-exfoliated method and the transport properties were studied. The resistivity of the bonded manganese oxide substrate was 6 orders of magnitude larger than that of a Bi2Se3 single crystal, implying that the bonded manganese oxide acted as an insulator substrate. The intrinsic resistance peak of the manganese oxide was present in the temperature-dependent resistivity curve. Metal-insulator transition induced by the magnetic field at a low temperature was observed. The simple parallel model cannot account for the electrical properties, as the conducting manganese oxide grains were bonded by polymeric silicone rubber and resistivity peaks were present only when the thickness of the Bi2Se3 layer was less than 1.043 μm. The spin injection may be present in the composite structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
