Abstract
A comparative study presents the scattering (τ t) and single particle relaxation (τ s) times of the two-dimensional electron gas (2DEG) in δ-doped, modulation doped, pseudomorphic Al 0.35Ga 0.65As/In x Ga 1 -x As, and in strain-relaxed In y Al 1 -y As/ In x Ga 1 -x As heterojunctions on misoriented (100) GaAs substrates. These times have been determined using temperature dependent (300 to 1.6 K) resistivity, low field Hall, and 1.6 K Shubnikov-De Haas (SdH) oscillatory magnetoresistance measurements. Strain relaxation was obtained by means of step graded In x Ga 1 -x As buffer layers with x=0.10 steps, 0.30 μm in thickness. The strain-relaxed samples have sheet carrier densities ranging from 7.5×10 11 to 1.2×10 12 cm -2, and corresponding mobilities of 8.2×10 4 and 4.2×10 4 cm 2/V·s. The pseudomorphic samples exhibit sheet densities ranging from 1.0×10 12 to 1.2×10 12 cm -2, with corresponding mobilities of 7.9×10 4 and 4.6×10 4 cm -2/V·s. In the range of In compositions and carrier densities used in this study, we find that for indium compositions exceeding 25%, both the single particle relaxation time, τ s, and the scattering time, τ t, are greater in the strain relaxed samples.
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