Abstract
Transparent ZnO thin film transistor (TFT) array of 176 X 144 (106 dpi) was fabricated on glass substrate. The V th of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm 2 /V s. The active layer (ZnO), gate insulator (Al 2 O 3 ), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode.
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