Abstract
As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm−2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.
Highlights
As a new class of non-volatile memory, resistive random access memory (RRAM) offers superior electronic characteristics, and advanced functionalities, such as transparency and radiation hardness
We investigated the transmittance spectrum of the as-fabricated transparent RRAM (TRRAM) device, which was composed of alternating layers of indium tin oxide (ITO) and aluminum nitride (AlN) on a glass substrate (i.e., ITO/AlN/ITO/glass)
These results demonstrate the reversible and steady bipolar resistive switching (RS) characteristics of AlN TRRAM
Summary
Since transparent conducting indium tin oxide (ITO) is highly resistant to proton damage for fluences up to 1016 ions cm−2 25, ITO/AlN/ITO TRRAM has been reported to exhibit nanosecond switching and low-power operation[12] To build on these developments, it is important to understand and explicitly evaluate the switching characteristics of TRRAM made with such materials under extreme environmental conditions for use in harsh electronics. Statistical analyses, including cycle-to-cycle and device-to-device tests of 50 cells, verify the excellent switching stability and uniformity under high oxygen partial pressure and proton irradiation These experimental results demonstrate the potential of AlN TRRAM for applications in harsh electronics due to the device’s superior reliability in extreme environments
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