Transparent amorphous conductive Cd–In–Sb–O thin films for flexible devices

Abstract

Transparent conductive amorphous Cd–In–Sb–O thin films were deposited on a flexible polyethylene naphthalate film by rf magnetron sputtering at room temperature. The large Hall mobility of ∼26 cm 2 V −1 s −1 was observed on the films with carrier density >10 20 cm −3. The carrier density varied from the order of 10 20 to 10 17 cm −3 with increasing the oxygen partial pressure. The Hall mobility reached up to ∼17 cm 2 V −1 s −1, even at carrier density of ∼10 17 cm −3. Flexible transparent filed-effect transistor was also fabricated using the Cd–In–Sb–O thin films as a channel layer and the device performance was investigated. The device exhibited a field-effect mobility of ∼0.45 cm 2 V −1 s −1 and an on–off ratio of ∼10 2 at room temperature.