Abstract
Report of the microstructure of the low temperature-GaAs layers before and after annealing, examined by high resolution electron microscopy. The layers grown at a substrate temperature of about 200°C contained twin blocks consisting of (111) twin lamellae, and the excess arsenic seems to be distributed at the twin boundaries. After annealing the sample at 600°C for 10 min the excess arsenic redistributed so that the twin blocks disappeared and some arsenic precipitates were formed
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