Abstract
The characterization of heterostructural layers by transmission electron microscopy using cleaved wedge specimens proves to be a fast analysis method. Examples are given for GaAlAs/GaAs and strained GaInAs/GaAs layer systems. It is demonstrated that the (200) dark-field contrast of GaInAs/GaAs layers reverses at an In concentration of x ≈ 0.47. Experimental high-resolution electron images of the edges of cleaved 90° wedges compare very well with computer-simulated images. Characteristic image features in GaAs and AlAs are explained by non-linear beam interactions and are shown to be sensitive to electron beam misalignment. These investigations are important to make a more precise assessment of interfaces possible.
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