Abstract
The application of transmission cathodoluminescence (TCL) in evaluating the quality of luminescing materials is reviewed. This scanning electron microscope technique is particularly useful in imaging localized nonuniformities, such as dislocations and inclusions, in semiconductors. Understanding and analyzing such material defects are of practical importance since they greatly affect device performance and lifetime. After a detailed description of TCL, the advantages of this technique in comparison to defect etching, cathodoluminescence imaging, and electron beam-induced current (EBIC) is presented. Since TCL is simple to perform, this technique can be used to evaluate and monitor material growth and device processing procedures. Although TCL may be applied to any luminescing material, this paper demonstrates its usefulness for the GaAs/GaAlAs and InP/InGaAsP materials systems which provide most sources and detectors for optical communication.
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