Abstract
Magnesium fluoride is a promising candidate for resistive-switching random access memory (RRAM) with biodegradable property. However, the underlying resistive-switching (RS) mechanism and conduction mechanism in MgF2 material is still not fully studied, which limits the further performance optimization. In this work, we have demonstrated the rectification and bipolar RS behaviors in Ti/MgF2/Pt device. The un-Formed device exhibits stable rectifying characteristics, with a rectifying ratio of ∼103 at ±3 V. Furthermore, transition from rectification mode to RS behavior can be achieved by a Forming process. Then the analogue switching properties with high uniformity was obtained with quasi-DC sweeps, and gradual modulation of multi-state was further realized. At last, the conduction and switching mechanism was discussed.
Highlights
Biodegradable electronics have attracted significant attention with applications in many fields, such as consumer electronics and bioelectronics.1–4 MgF2 is a biodegradable material with appropriate degradation rate and has been used in many biodegradable products.5 Recently, MgF2 has been proved to be an excellent and degradable switching layer for resistive-switching random access memory (RRAM).6 the underlying resistive switching mechanism and conduction mechanism in MgF2 device is still not fully understood, which restricts the following device optimization and reliability improvement.In this work, we have demonstrated the rectification and bipolar resistive-switching (RS) behaviors in Ti/MgF2/Pt devices and elucidated the transition mechanism from rectification to bipolar RS behavior
The structure of the Ti/MgF2/Pt device is shown in Figure 1a, and the fabrication process is as follow: Firstly, 80 nm thick Pt with a thin Ti adhesion layer serving as bottom electrode was deposited by electron beam evaporation on the full SiO2/Si wafer
With the device turning to ON state, a rectifying ratio of ∼103 at ±3 V can be achieved
Summary
Biodegradable electronics have attracted significant attention with applications in many fields, such as consumer electronics and bioelectronics. MgF2 is a biodegradable material with appropriate degradation rate and has been used in many biodegradable products. Recently, MgF2 has been proved to be an excellent and degradable switching layer for resistive-switching random access memory (RRAM). the underlying resistive switching mechanism and conduction mechanism in MgF2 device is still not fully understood, which restricts the following device optimization and reliability improvement.In this work, we have demonstrated the rectification and bipolar resistive-switching (RS) behaviors in Ti/MgF2/Pt devices and elucidated the transition mechanism from rectification to bipolar RS behavior. MgF2 is a biodegradable material with appropriate degradation rate and has been used in many biodegradable products.. MgF2 has been proved to be an excellent and degradable switching layer for resistive-switching random access memory (RRAM).. The underlying resistive switching mechanism and conduction mechanism in MgF2 device is still not fully understood, which restricts the following device optimization and reliability improvement. We have demonstrated the rectification and bipolar resistive-switching (RS) behaviors in Ti/MgF2/Pt devices and elucidated the transition mechanism from rectification to bipolar RS behavior. The initial device shows excellent rectifying characteristics, with a rectifying ratio of ∼103 at ±3 V. The quasi-DC sweeping results indicate good uniformity and gradual switching properties of the device. The conduction and switching mechanism was investigated
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