Abstract
Atomic depth distribution and growth modes of Sn on an Si(1 1 1)-√3×√3-Ga(1 ML) surface at room temperature were studied after each monolayer deposition of Sn by using reflection high-energy electron diffraction (RHEED) and characteristic X-ray spectroscopy measurements as functions of the glancing angle θ g of the incident electron beam. Intermixing between Sn and Ga occurred after deposition of one monolayer (ML) of Sn, resulting in the formation of a flat film of Ga–Sn alloy. Above a critical Sn coverage of about 1 ML, the growth mode changed significantly. That is, the alloying between Sn and Ga was suppressed, and additional Sn grew into islands on the Sn–Ga alloy.
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