Abstract
The optoelectronic properties of a-Si:H films grown at different substrate temperatures between 30°C and 250°C were evaluated in-situ by contactless Time Resolved Microwave Conductivity (TRMC) measurements. The transient photoconductivity induced by 532nm laser pulses during the growth of multilayer systems composed of a-Si:H layers deposited at different temperatures made a direct comparison of these films possible. The maximum height of the TRMC signal was observed to decrease strongly with decreasing deposition temperature. Additionally, the annealing of layers deposited at low temperatures was studied by TRMC, stationary photoconductivity, IR and ESR measurements. Whereas a considerable increase of the photoconductivity and the TRMC signal and a decrease in the spin density was observed during annealing at 250°C, the IR transmission spectra remained unchanged.
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