Transient memristive device based on lead-free double perovskite for secured data storage and artificial learning systems

Abstract

Modern day electronic devices are fascinated by various indispensable activities for various schemes. Transient devices are one of those systems useful for disposable electronics. However, choice of materials is an integral part, because the material should be compatible with the required device application and can show transient nature at the same time. Most importantly, the material for the aforesaid application should not possess any environmental hazard. In this work, we have for the first time integrated non-toxic double perovskite material in transient memristive application. The Cs2AgBiBr6 integrated in between Au and indium doped tin oxide (ITO) electrode serves as the functional material and the proposed device exhibited dual-functional switching characteristics. The device could retain the reproducible and stable resistive memory feature along with high-density storage capacity. The threshold switching behavior is useful to realize selector device in cross-bar resistive memory architecture. Thus, the same device can be utilized simultaneously for both the application. In addition, the device could also demonstrate some basic synaptic functions. Finally, the modulation of device resistance could be ascribed to the establishment/dissolution of conductive path related to Br− vacancy and Ag filaments. Interestingly, the device could also display transient behavior as the Cs2AgBiBr6 film and the device undergo rapid decomposition within 60 s in H2O.