Abstract
Transient hole transport measurements in undoped As 2Se 3 and Se and in doped As 2Se 3 are explained without recourse to the presence of deep traps. We suggest that the conduction process involves small polarons as originally proposed by Emin. Correlations between the measured activation energies and the dispersion in the Se and As 2Se 3 systems as well as the dependences of the drift mobilities and the dc mobilities on doping in As 2Se 3 are explained.
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