Abstract
We have performed transient capacitance measurements on indium tin oxide/poly( p -phenylenevinylene)/Al diodes which have a depletion region type Schottky barrier at the polymer/Al interface. We show that both the transport and trap state distributions within the polymer can be determined from the results and present a fully consistent model that describes the observed behaviour in terms of a de-trapping of carriers from a discrete trap level to a Gaussian distribution of transport states.
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