Abstract
This paper presents the transient analysis of the equivalent single conductor (ESC) model of hybrid Cu-CNT on-chip interconnects for nanopackaging using matrix rational approximation (MRA) modeling technique. The analysis of propagation delay and peak crosstalk noise is carried out for single and coupled Cu-CNT interconnect lines at 14 nm and 22 nm technology nodes. It has been observed that the proposed MRA model provides a speed-up factor of 131 compared to the HSPICE. An error of less than 1% confirms the accuracy of the proposed model compared to the SPICE simulations. It is observed that Cu-CNT lines are more immune to the crosstalk due to lesser coupling effects compared to Cu and CNT interconnects. The efficacy, accuracy, and comprehensive analysis using the proposed model ensures immense application possibility of the proposed model in the VLSI design automation tools at the nanopackaging level.
Highlights
DURING the past two decades, Copper (Cu) as a conventional on-chip interconnect material has been successfully fabricated with dual damascene metallization process using proper barriers such as Tantalum nitride (TaN) [1]
This paper presented a robust and efficient matrix rational approximation (MRA) model used in the transient analysis of the equivalent single conductor (ESC) model of hybrid Cu-Carbon nanotubes (CNTs)
It is observed that the MRA model provides the key performance parameters fastly than the industry-level SPICE simulator
Summary
DURING the past two decades, Copper (Cu) as a conventional on-chip interconnect material has been successfully fabricated with dual damascene metallization process using proper barriers such as Tantalum nitride (TaN) [1]. The VLSI integrated circuit (IC) chips' aggressive scaling increased the resistivity of the interconnects in nanopackaging applications [2]. The performance parameters of interconnects, namely, propagation delay and crosstalk, are central for the reliability and overall performance of state-ofthe-art circuits and systems [22] The analysis of these parameters is carried out, preferably in two ways, either by using the simulation techniques or by deriving the closed-form analytical expressions [23]. This paper presents an equivalent single conductor (ESC) model of Cu-CNT interconnect lines, and to the best of authors’ knowledge, for the first time employs the matrix rational approximation (MRA) technique to perform transient analysis of the ESC model of hybrid Cu-CNT on-chip interconnects. Four different structures of these interconnects, namely, single, coupled-two, coupled-three, and coupled-four Cu-CNT lines, have been considered to analyze propagation delay and peak crosstalk noise at 14nm and 22nm technology nodes.
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