Abstract
The growth of trace amount of niobium (Nb) doped β-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped β-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal–semiconductor–metal structure based on trace amount of Nb doped β-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of β-Ga2O3 photodetector can be improved by doping trace amount of Nb in β-Ga2O3 thin film.
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