Abstract
The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·1019 cm−3 to 3·1017 cm−3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm2 at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.
Highlights
In order to obtain stimulated emission and to study the conditions for its realization in the planar InN layers, a series of monocrystalline InN samples were grown by plasma-assisted molecular-beam epitaxy (PA MBE) on (0001) sapphire substrates
To expand the range of the parameters of InN structures that affect the implementation and characteristics of stimulated emission, we have studied the structures grown earlier at Cornell University
We should note that to our knowledge, no attempts were made in previous studies to obtain stimulated emission in InN structures similar to those studied in this work, including PL studies under pulsed optical pumping[28,29]
Summary
In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm[2] at T = 8 K and the stimulated emission is observed up to 215 K In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated. Due to a low effective mass and high electron mobility in InN films, the realization of both optoelectronic and logic components seems feasible; the fabrication of lasers and optical amplifiers for the 1.5–1.9 μm spectral range based on crystalline InN or InGaN compounds would open up exciting prospects for application in communication technologies. Rather pure n-InN/GaN/AlN/Al2O3 planar structures with an equilibrium carrier concentration in the InN layer down to 3∙1017 cm−3 exhibited intense photoluminescence (PL) corresponding to interband transitions in a degenerate direct-gap material[19,20]. Light-emitting diodes based on n-InN/p-GaN/Al2O3 and n-InN/p-NiO/p-Si heterostructures emitting in the range 1.55–1.6 μm have been obtained[22,23]
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