Abstract
Cu2ZnSnS4 (CZTS) thin films were deposited from a single cationic bath by Successive Ionic Layer Adsorption and Reaction (SILAR) method. Regular SILAR route for CZTS had the drawback of preferential adsorption of copper and tin cations in comparison with zinc. This resulted in Cu3SnS4 (CTS) and Cu2S phases rather than phase pure CZTS films. A modified SILAR route, with a separate bath for Zn2+ ions, circumvented the difficulty and hence led to phase pure CZTS thin films. UV–visible absorption spectra of the CZTS thin films showed absorption coefficients of ~ 104 cm−1 and a band gap of 1.5 eV. Combined van der Pauw and Hall measurements of CZTS thin films showed a resistivity of approximately 1.51 × 102 Ωcm, carrier density of ~ 1.28 × 1017 cm−3, and mobility ~ 0.32 cm2 V−1s−1. A completely solution processed P–N junction was fabricated and characterized by forming glass/FTO/TiO2/CdS/CZTS multilayer.
Highlights
The leading thin film photovoltaic technologies of today based on the chalcogenide materials, cadmium telluride (CdTe) and copper indium gallium selenide (CIGS), are considered to be low cost and widely deployable [1]
Uniform thin films of CZTS have been deposited by room temperature single step Successive Ionic Layer Adsorption and Reaction (SILAR) process by properly controlling the precursor concentrations and using a separate cationic bath for Zn2+ ions
CZTS thin films deposited on glass substrates showed a resistivity of approximately 1.51 × 1 02 Ωcm, carrier density of ~ 1.28 × 1017 cm−3, and mobility ~ 0.32 cm2 V−1s−1
Summary
The leading thin film photovoltaic technologies of today based on the chalcogenide materials, cadmium telluride (CdTe) and copper indium gallium selenide (CIGS), are considered to be low cost and widely deployable [1]. Recent research works in this field are intended to improve the efficiency of CZTS solar cells and reduce production cost by developing several non-vacuum deposition methods. These include spray pyrolysis [12], spin coating [13], chemical bath deposition [14, 15], electro deposition [16], and solvothermal and hot injection methods [17]. The record CZTSSe cell (produced by a hydrazine solution approach) has an efficiency of 12.6% [18], but suffers from large voltage loss due to recombination at defects in the bulk and at the interfaces This best result was achieved through a Cu-poor, Zn-rich stoichiometry with the band gap being controlled by the S/Se ratio. With an aim to develop a low cost and industry friendly approach to develop CZTS thin films; we have adopted the Successive Ionic Layer Adsorption and Reaction (SILAR)
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