Abstract
In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al 2 O 3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 hours and for thicknesses from 100 to 10 nm. The triangular voltage sweep technique characterised alkali ion penetration, and measured no detectable alkali ions for the Al 2 O 3 capacitors. By contrast, the dose of alkali ions in silicon dioxide MOS capacitors steadily increased with increasing soak times in the PBS solution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.