Abstract

Ferroelectrics are popular for sensors, actuators and transducers. However, the energy barrier for reversing the polarization leads to extra energy losses, while the hysteresis causes phase-lags and non-linearities between input and output signals. The high piezoelectric constants of ferroelectrics dictate the figure-of-merit of piezoelectric devices. Enhancing the piezoelectric constant of linear-piezoelectrics potentially leads to next-generation piezoelectric devices free from issues associated with ferroelectrics. By epitaxial growth of undoped ZnO films on flexible Hastelloy substrates, we demonstrated an ~85% improvement in the piezoelectric constant, and more importantly maintained the linearity of the piezoelectric response. Strong out-of-plane and in-plane crystallographic alignments are detected in the epitaxial sample, yet modeling of the effective thin-film piezoelectric constant shows only a limited contribution of the optimized textures. The improvement in the piezoelectric response is ascribed mostly to the in-plane epitaxial strain resulted from the lattice mismatch of ZnO to the substrate. The epitaxial ZnO film on Hastelloy promisingly offer high-precision positioners with nano-/pico-meter resolutions. Enhancing the piezoelectric constant by strain engineering potentially removes the barrier for applications of linear-piezoelectrics and enriches the piezoelectric research community.

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