Abstract
The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a flexible and scalable path towards high-quality three-dimensional inorganic/organic optoelectronic structures. Here, hole-conductive poly(3,4-ethylenedioxythiophene) (PEDOT) grown by oxidative chemical vapor deposition is used to fabricate transparent and conformal wrap-around p-type contacts on three-dimensional microLEDs with large aspect ratios, a yet unsolved challenge in three-dimensional gallium nitride technology. The electrical characteristics of two-dimensional reference structures confirm the quasi-metallic state of the polymer, show high rectification ratios, and exhibit excellent thermal and temporal stability. We analyze the electroluminescence from a three-dimensional hybrid microrod/polymer LED array and demonstrate its improved optical properties compared with a purely inorganic microrod LED. The findings highlight a way towards the fabrication of hybrid three-dimensional optoelectronics on the sub-micron scale.
Highlights
The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices
Nanostructures with high aspect ratios can be completely free of extended defects, serving as perfect quasi-substrates, which might turn into a huge advantage for devices where defects play an important role in device performance, as it is the case in AlGaN UV LEDs5,6
Hybrid optoelectronic devices based on core-shell microrod structures require conformal and pinhole-free coatings that can barely be accomplished by conventional liquid-based deposition techniques
Summary
From scanning electron microscopy (SEM) images, the PEDOT film thickness was estimated to be around 60 nm. OCVD has proven its suitability for achieving homogeneous coatings of 3D GaN-based microrods, where it can be considered as the deposition method of choice for conductive polymers. Electrochemical capacitance-voltage (ECV, Supplementary Fig. 3) measurements yield a donor density of 2 × 1018 cm−3, comparable to the n-GaN doping density used in LED structures[38,39].
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
