Toward scalable III-nitride quantum dot structures for quantum photonics

Abstract

Semiconductor quantum-dot structures suitable for integrated quantum photonic circuits are discussed with a special focus on group-III nitride quantum dots. The atomic-like electronic structure enables quantum dots to generate, process, and detect photonic quantum information. The ability to separately address electrons and holes in a quantum dot gives rise to unique opportunities and challenges. Group-III nitride quantum dots cover a wavelength range from 300 to 900 nm which provides a technological platform to interface with atoms, trap ions, and diamonds. The large exciton binding energy in III-nitride enables single photon emission above room temperature. III-nitride quantum dots also possess unique challenges such as pronounced spectral diffusion, phonon-induced dephasing, random photon polarization, and a long radiative lifetime due to the strong piezoelectric field. This chapter discusses recent advances and efforts in combating these challenges.