Abstract
Nanoionic based resistive switching memory cells are nowadays being implemented in novel memory technology known as Conductive Bridging Random Access Memory. These memory cells, known as programmable metallization cells, are a promising memory technology not only due to their scaling potential but also because of characteristics such as non-volatility, low-power operation and speed. Resistance switching in programmable metallization cells is related to the growth and dissolution of conductive metallic filaments in solid electrolytes. In this work, the effect of total ionizing dose on the solid-state electrolyte obtained after photodoping of chalcogenide based programmable metallization is investigated. Equivalent circuits of devices are extracted from impedance spectroscopy measurements and used to gain insights on the effect of ionizing radiation on these materials and structures.
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