Abstract
An enhanced threshold shift was observed in irradiated (total-ionizing-dose) 130 nm partially depleted silicon-on-insulator I/O nMOSFETs after 3000 s channel hot-carrier stress. This phenomenon was caused by the irradiation-induced additional channel lucky electrons which were injected in the silicon dioxide layers (STI/BOX/gate oxide). Mechanism of formation of greater substrate current in irradiated narrow devices was discussed. Accordingly, a model (enhanced lucky-electron model/Hot carrier injection effect) applied to devices in radiation space environment is established. In addition, the unusual phenomenon in irradiated devices with wide channel was also discussed.
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