Abstract

The gate dielectric breakdown characteristics of 65nm process PMOS capacitors impact of total ionizing dose (TID) radiation effect has been investigated in this paper. The capacitors breakdown times of PMOS capacitors with and without γ ray irradiation are measured using the constant voltage stress (CVS) procedures. The experimental results shown that the gate current varies with the gate voltage (Ig-Vg) has little change with and without the TID irradiation. However, the probability plotting (Weibull distributions) of breakdown times shift and the average breakdown charges decrease after radiation. This results indicate that the TID effect significant affect the capacitors reliability, which bring hidden trouble to space application.

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