Total ionizing dose and proton radiation characterization of Si P-i-N visible hybrid focal plane arrays

Abstract

The results of total ionizing dose and proton fluence characterization of hybrid Si P-i-N focal plane arrays are reported. The focal plane arrays consist of a silicon P-i-N detector array bump bonded to 128 x 128 CMOS readout integrated circuit (ROIC). The FPAs were characterized in total ionizing dose and proton fluence radiation environments. Full radiometric characterizations were performed at each radiation dose level to determine the impact of the radiation on dark current, noise, responsivity, sensitivity, and dynamic range. Results from the total ionizing dose experiment demonstrate an unexpected increase in the visible P-i-N detector dark current. The median dark current increased more than two orders of magnitude from pre-radiation to 300 krad(Si) and the magnitude of the dark current was found to be a strong function of detector bias. No appreciable change in responsivity or noise was observed for wavelengths above 400 nm up to a total ionizing dose of 750 krad(Si). Results from the proton radiation experiment show no appreciable change in responsivity was observed up to a 63 MeV proton fluence of 3 x 1012 protons/cm2 (400 krad(Si) of total ionizing dose). The median dark current increased approximately two orders of magnitude, but even at this higher level, the dark current did not contribute significantly to the median noise at an integration time of 10 ms. The dominant degradation mechanism, in both the total ionizing dose and proton fluence environments, is an increase in dark current in the Si P-i-N detectors.