Abstract
Odd loops of line defects were firstly found in the heavily irradiated amorphous films. A developed defect usually comprises two types of enclosed curves with different charges. Topologically, these defects are one-dimensional self-avoiding manifolds with variable connectivity. It is revealed that an attractive self-avoiding reaction and point-like defects dominate the evolution behavior of line defects. Scaling analyses show that both types of line defects are of statistical self-similarity with fractal dimensions between 1 and 2. Moreover, A self-consistent theory via self-avoiding tethered manifolds is proposed to account for the static and dynamic properties of the observed defects.
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