Abstract
The thin-film transistors (TFTs) using the pulsed-plasma-deposition–prepared amorphous Zn-Sn-O (a-ZTO) as active layer and the dip-coated polymethylmethacrylate (PMMA) as gate insulator were fabricated. The results display that the PMMA film shows anti-reflection phenomenon when the PMMA layer combines with the ZTO layer to form a double-layer configuration. Moreover, the oxygen vacancy existing in ZTO decreased with the increase of the substrate heating. Compared to the reference a-ZTO TFTs with a channel prepared at RT and subsequently annealing at , a markedly improved performance was evidenced for TFT via treatment of heating in the process of preparation ( in O2 ambient). The optimum a-ZTO TFTs, operating in an enhancement mode, showed a high mobility of and an on/off ratio over 105.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
