Abstract
The thin-film transistors (TFTs) using the pulsed-plasma-deposition–prepared amorphous Zn-Sn-O (a-ZTO) as active layer and the dip-coated polymethylmethacrylate (PMMA) as gate insulator were fabricated. The results display that the PMMA film shows anti-reflection phenomenon when the PMMA layer combines with the ZTO layer to form a double-layer configuration. Moreover, the oxygen vacancy existing in ZTO decreased with the increase of the substrate heating. Compared to the reference a-ZTO TFTs with a channel prepared at RT and subsequently annealing at , a markedly improved performance was evidenced for TFT via treatment of heating in the process of preparation ( in O2 ambient). The optimum a-ZTO TFTs, operating in an enhancement mode, showed a high mobility of and an on/off ratio over 105.
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