Abstract
The <TEX>$TiO_2$</TEX>/ZnS/Ag/ZnS/<TEX>$TiO_2$</TEX> multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in <TEX>$TiO_2$</TEX>/Ag/<TEX>$TiO_2$</TEX> structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between <TEX>$TiO_2$</TEX> and Ag to prevent the oxidation of Ag layer efficiently in <TEX>$TiO_2$</TEX>/ZnS/Ag/ZnS/<TEX>$TiO_2$</TEX> structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the <TEX>$TiO_2$</TEX>/Ag/<TEX>$TiO_2$</TEX> multilayered films without ZnS as an antioxidant layer. The 3 times stacked <TEX>$TiO_2$</TEX>/ZnS/Ag/ZnS/<TEX>$TiO_2$</TEX> films have low sheet resistance of <TEX>$1.22{\Omega}/{\square}$</TEX> and luminous transmittance was as high as 62% in the visible ranges.
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