Abstract
We report the growth of TiN thin films on Si(100) substrates by pulsed laser deposition (PLD) using a homogenized KrF excimer laser beam. The TiN films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and Atomic force microscope (AFM). The homogenized beam drastically decreased the number of particles incorporated into the film compared with that grown by conventional means using a non-homogenized beam. Additionally, the grown film had a strong peak with (200) preferred orientation in XRD spectra, and rocking curve measurements of XRD and RBS analysis indicated that the crystallinity was improved by the homogenized beam.
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