Abstract
Electrical and optical properties of amorphous As2Se3 films modified by tin (a non-transition metal) and iron (a transition metal) as well as the state of the modifying impurity atoms are investigated. Tin is found electrically inactive in the modified films like in vitreous As2Se3. Iron in the modified films is shown to form donor centers with the ionized and neutral states corresponding to the Fe3+ and Fe2+ ions, respectively. A conclusion is made that an electrical activity of impurities in the chalcogenide semiconductors modified films results from the chemical nature of modifiers whereas the rf co-sputtering technique provides their high concentration only. [Russian Text Ignored].
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