Abstract
A study of the performance of an Avalanche Photodiode (APD) at low bias using time-domain modeling has been conducted. Three important considerations in this range of bias voltages are: the emission of holes from the interface-trap at the valence-band discontinuity; the diffusion of photogenerated holes from the undepleted region of the absorption layer; and the velocity of carriers at low electric fields. A new recurrence relation has been obtained for the emission of holes from the valance-band trap. The time-delays due to the diffusion of holes photogenerated in the undepleted region of the absorption layer has been taken into account in computing the impulse response of the APD in time-domain. The effect of velocity of the carriers at low- bias has been considered by using a field-dependent formulation for velocity. The frequency response of the device has been obtained by using the fast Fourier Transform of the impulse response in time-domain. The result on the gain-bias and bandwidth-gain characteristics show good agreement with the published experimental data on InP/InGaAs APDs.
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