Abstract
The lattice Boltzmann method (LBM), which accounts for electron-phonon scattering, is used to investigate heat generation effects on silicon-on-insulator (SOI) transistors. The wave nature of the LBM is shown and its influence on subcontinuum dynamics is discussed. The implementation of boundary conditions for constant temperature and constant heat flux is described. SOI devices are modeled as thin films in one dimension. The LBM simulation results for diffusive, transitional, and ballistic regimes are compared with Fourier equation solutions and literature results. For transitional and ballistic regimes, Fourier equation results underpredict the temperature levels obtained by the LBM, which is consistent with the findings previously reported by different authors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
