Abstract
A new time-of-flight (TOF) ion detection system for heavy ion backscattering spectrometry (HIBS) is described and examples are given of the use of the system for measuring low-level contamination on Si wafers. Currently, the TOF-HIBS system has a sensitivity of 1 × 109/cm2 for the heaviest of surface impurity atoms and a mass resolution capable of separating Fe from Cu. The sensitivity is expected to improve by an additional order of magnitude with three parallel detectors in an optimized configuration.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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