Abstract
The dynamical behaviour of heterogeneous thin films during annealing is studied, starting from a random atomic configuration. A computer simulation is performed for the lattice gas model using the Metropolis method. The relaxation behaviour of the atomic structure of the film is clarified for the island mode, layer mode and roughening mode. Fluctuation of the cluster edges appears to be much stronger in the case of two-dimensional clusters in the layer mode than in the case of three-dimensional clusters in the island mode, and the roughening temperature becomes lower in the former case. The condensation process during the annealing is divided into two stages: the initial stage in which single atoms on the substrate are captured into clusters and attain to a quasi-thermal equilibrium with clusters, and the subsequent stage of cluster growth. The clusters grow mainly through the evaporation and condensation of single atoms on clusters in the case of the island mode, and through diffusion and coalescence of clusters in the case of the layer mode.
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